Paper
18 February 2002 Charge limitation effects in emission from semiconductor photocathodes at inhomogeneous excitation
Boris I. Reznikov, Arsen V. Subashiev
Author Affiliations +
Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456293
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
Photoemission from a semiconductor with negative electron affinity surface is investigated theoretically for the case of local excitation regime and Gaussian distribution of the light intensity over a sample surface. While the maximum emission current is an exponential function of the negative electron affinity value, the inhomogeneous intensity distribution results in smoothed dependence of the emission current on the light intensity in the region of maximum current. The relaxation processes to the stationary emission and the cathode restoring time are found to be less sensitive to light non-homogeneity due to photovoltage level over the surface.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris I. Reznikov and Arsen V. Subashiev "Charge limitation effects in emission from semiconductor photocathodes at inhomogeneous excitation", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); https://doi.org/10.1117/12.456293
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KEYWORDS
Semiconductors

Quantum efficiency

Doping

Physics

Absorption

Capacitors

Control systems

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