18 February 2002 Computer simulation and SIMS profiling of Zn implantation in A3B5 semiconductors
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456262
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
The method for the determination of the impurity displacement threshold energy in semiconductor heterostructures is further developed. New experimental samples for this method are proposed. Important parameters for the samples are defined. Also, simulation of the sputtering of wide impurity depth profiles is carried out. Improved values for the penetration lengths of Zn atoms with different impact energies in GaAs were found.
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Boris J. Ber, A. P. Kovarsy, Alexander A. Schmidt, Yuri V. Trushin, Evgeni E. Zhurkin, Fedor A. Krusenstern, "Computer simulation and SIMS profiling of Zn implantation in A3B5 semiconductors", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456262; https://doi.org/10.1117/12.456262
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