18 February 2002 Feshbach resonances in Si-, Ge-, and Sn- negative ion photodetachment
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456242
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np3 half-filled shells. The photodetachment cross sections from two outer shells of Si-, Ge- and Sn- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound 'nsnp4' states revealed themselves as a very sensitive interference structure in the cross section.
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Vadim K. Ivanov, Galina Yu. Kashenock, Constantin V. Lapkin, "Feshbach resonances in Si-, Ge-, and Sn- negative ion photodetachment", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456242; https://doi.org/10.1117/12.456242
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