18 February 2002 Improved strained GaAsP photocathodes
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002); doi: 10.1117/12.456285
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
The parameters of spin-polarized electron photocathode based on strained layer GaAs0.95P0.05/GaAs0.7P0.3 structure have been improved on the base of X-ray, Raman and polarized photoluminescence studies of such structure. The polarization maximum value 86% in conjunction with Y equals 0.16% makes such cathodes one of the best no matter where.
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Yuri A. Mamaev, Arsen V. Subashiev, Yuri P. Yashin, Anton N. Ambrajei, Alexander V. Rochansky, "Improved strained GaAsP photocathodes", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456285; https://doi.org/10.1117/12.456285
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KEYWORDS
Polarization

Gallium arsenide

Quantum efficiency

Heterojunctions

Metalorganic chemical vapor deposition

Electron beams

Luminescence

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