Nernst-Ettingshausen effect in the hopping condition range: experiment and theory for Pb1-xSnxTe doped with In

Sergei A. Nemov; Yuri I. Ravich

doi:10.1117/12.456244

18 February 2002 Nernst-Ettingshausen effect in the hopping condition range: experiment and theory for Pb_1-xSn_xTe doped with In

Sergei A. Nemov, Yuri I. Ravich

Author Affiliations +

Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456244
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation

Abstract

In this contribution we report on Nernst-Ettingshausen effect, electrical conductivity, thermoelectric power, and Hall effect in the temperature range from 77 to 400 K for solid solution (Pb_0.78Sn_0.22)Te with In dopant impurity. Nernst-Ettingshausen coefficient Q exhibits properties unusual for IV-VI materials. It has positive sign and decreases rapidly with an increasing temperature. A theoretical model, taking into account hopping conductivity along strongly localized electronic states of In impurity is suggested. The model gives a good agreement with experimental data.

Citation Download Citation

Sergei A. Nemov and Yuri I. Ravich "Nernst-Ettingshausen effect in the hopping condition range: experiment and theory for Pb_1-xSn_xTe doped with In", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); https://doi.org/10.1117/12.456244

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