18 February 2002 New superlattices for spin-polarized electron sources
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456274
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
We report the results on polarized electron emission from a new strained InGaAlAs/AlGaAs superlattices with an enlarged band gap, modulation doping and an optimized last GaAs layer. The yield and polarization measurements show that this structure delivers more than 0.1% quantum yield at the maximum of the polarization spectrum, the maximum polarization degree being equal to 80% at room temperature. These values present a 10-fold improvement in the quantum yield over that of the previously designed InAlGaAs-AlGaAs superlattices at the same vacuum conditions.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri A. Mamaev, Yuri A. Mamaev, Arsen V. Subashiev, Arsen V. Subashiev, Yuri B. Bolkhovityanov, Yuri B. Bolkhovityanov, Aleksandr I. Toropov, Aleksandr I. Toropov, Askhat K. Bakharov, Askhat K. Bakharov, Mikhail A. Revenko, Mikhail A. Revenko, Alexander M. Gilinskii, Alexander M. Gilinskii, Yuri P. Yashin, Yuri P. Yashin, Anton N. Ambrajei, Anton N. Ambrajei, Alexander V. Rochansky, Alexander V. Rochansky, } "New superlattices for spin-polarized electron sources", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456274; https://doi.org/10.1117/12.456274
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