18 February 2002 Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental investigations
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456259
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy (TEM) the nucleation behavior of silicon carbide on silicon during the interaction of elemental carbon with silicon surfaces was investigated. The critical island sizes and the growth mechanisms leading to nano-dot formation were determined.
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F. Scharmann, F. Scharmann, Joerg Pezoldt, Joerg Pezoldt, } "Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental investigations", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456259; https://doi.org/10.1117/12.456259
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