18 February 2002 Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation
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Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456260
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation
Abstract
The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.
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Kirill L. Safonov, Kirill L. Safonov, Dmitri V. Kulikov, Dmitri V. Kulikov, Yuri V. Trushin, Yuri V. Trushin, Joerg Pezoldt, Joerg Pezoldt, "Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456260; https://doi.org/10.1117/12.456260
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