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28 March 2002 Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets
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Proceedings Volume 4628, Nonlinear Materials: Growth, Characterization, Devices, and Applications; (2002) https://doi.org/10.1117/12.460816
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
We investigated the operation of a diode-pumped Yb:YAG laser passively Q-switched, by Cr4+:YAG, Cr4+:LuAG, and Cr4+:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized, and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross section, e.g. (sigma) emequals3.3x10-20 cm2 were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of approximately equals 10.4-kW, and energy of approximately equals 0.5 mJ/pulse were extracted with 30% extraction efficiency.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yehoshua Y. Kalisky, Christophe Labbe, Karol Waichman, Leonid Kravchik, U. Rachum, Peizhen Deng, Jun Xu, Jun Dong, and Wei Chen "Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets", Proc. SPIE 4628, Nonlinear Materials: Growth, Characterization, Devices, and Applications, (28 March 2002); https://doi.org/10.1117/12.460816
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