Megavolt Ion Implantation Into Silicon

P. F. Byrne; N. W. Cheung

doi:10.1117/12.941340

31 May 1984 Megavolt Ion Implantation Into Silicon

P. F. Byrne, N. W. Cheung

Author Affiliations +

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941340
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Formation of buried p-type and n-type layers in silicon by megavolt ion implantation has potential to replace epitaxial growth for buried layer formation. We present arguments for the use of ion implantation for buried layer formation.

Citation Download Citation

P. F. Byrne and N. W. Cheung "Megavolt Ion Implantation Into Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941340

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