The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon

S. Prussin; David I. Margolese; Richard N. Tauber

doi:10.1117/12.941355

31 May 1984 The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon

S. Prussin, David I. Margolese, Richard N. Tauber

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941355
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

This study was directed toward exploring the relationship between the implant conditions and the depth and nature of the amorphous layers generated in silicon. High dose implants of As and P were used to generate buried ane surface amorphous layers at slightly higher than room temperature. The amorphous layer depths were measured and the depth-fluence and depth-energy relationships were compared with Brice's anfiysis. It was found that good fits weri obtained for a threshold damage density of 2.5 x 10²⁰ keV cm^-3 for As and 1.0 x 10²¹ keV cm^-3 for P. Phosphorus ion implantations exhibted a greater tendency to generate buried amorphous layers as well as to generate amorphous layers which included a smaller fraction of the total fluence than was found for As ion implantations.

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S. Prussin, David I. Margolese, and Richard N. Tauber "The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941355

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