The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon

Alan E. Morgan; William T. Stacy; Russell C Ellwanger; Yde Tamminga

doi:10.1117/12.941344

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31 May 1984 The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon

Alan E. Morgan, William T. Stacy, Russell C Ellwanger, Yde Tamminga

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Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941344
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The formation of platinum nickel silicide has been studied by sputter depositing a 600 Å Pt.₄Ni.₆ alloy layer onto (111) n-type Si and annealing for 20 min. in N2 at tempera-tures between 300 and 750°C. RBS, AES and cross-sectional STEM/EDS were used for character-ization. The ternary silicide develops as a two or three layer structure and only at the higher temperatures does a uniform Pt₄Ni.₆Si layer result. An interfacial monosilicide layer containing mostly Ni is present throughout the growth sequence. The silicide growth mechanism can be understood in terms of metal atom diffusion with the preferential bonding of Si to Pt leaving Ni to diffuse deeper into the Si substrate.

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Alan E. Morgan, William T. Stacy, Russell C Ellwanger, and Yde Tamminga "The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941344

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