6 May 2002 High-power-gas-discharge- and laser-plasma-based EUV sources
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Proceedings Volume 4631, Gas and Chemical Lasers and Intense Beam Applications III; (2002) https://doi.org/10.1117/12.465786
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
In this paper we discuss new results from investigations on high power EUV sources for micro-lithography based on gas discharge produced plasmas and laser produced plasmas. The EUV development is performed at XTREME technologies GmbH, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena. For gas discharge EUV sources we report data based on Xenon filled Z-pinches. Prototypes of the EUV source achieve an EUV output power of 10 W in-band in continuous operation. Repetition rates of 1 kHz are possible with liquid cooling of the discharge head. The spectral distribution of the EUV radiation shows a maximum around 13.5 nm and matches the reflection characteristics of silicon/molybdenum multilayer mirrors. Conversion efficiencies between 0.25 percent and 0.7 percent into a solid angle of 2p sr were achieved with the Z-pinch source depending the discharge geometry. The total EUV average power in the spectral range between 5 nm and 50 nm is about 200 W in 1.8 sr. Pulse energy stability data show standard deviation between 1-4 percent. Spatial and temporal emission characteristics of the discharge source in dependence on the discharge geometry are discussed. The laser plasma investigations are performed with an experimental setup consisting of a diode pumped laser system coupled to a liquid jet target. Since the conversion efficiency into EUV-power depends critically on the emitter density in the interaction region, we use a Xenon-jet, which is cryogenically liquefied and injected under high pressure into the vacuum vessel. Thus the laser is impinging on a target of solid-state density, which allows the generation of EUV-radiation with high conversion efficiencies of 0.5 percent into a solid angle of 2p sr.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Flohrer, Frank Flohrer, Kai Gaebel, Kai Gaebel, Diethard Kloepfel, Diethard Kloepfel, Peter Koehler, Peter Koehler, Imtiaz Ahmad, Imtiaz Ahmad, S. Goetze, S. Goetze, Juergen Kleinschmidt, Juergen Kleinschmidt, Vladimir Korobotchko, Vladimir Korobotchko, Jens Ringling, Jens Ringling, Guido Schriever, Guido Schriever, Uwe Stamm, Uwe Stamm, } "High-power-gas-discharge- and laser-plasma-based EUV sources", Proc. SPIE 4631, Gas and Chemical Lasers and Intense Beam Applications III, (6 May 2002); doi: 10.1117/12.465786; https://doi.org/10.1117/12.465786


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