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18 March 2002 Erbium and phosphorus impurity doping in Si nanostructures fabricated by laser ablation
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Proceedings Volume 4636, Nanoscience Using Laser-Solid Interactions; (2002)
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Erbium (Er)- or phosphorus (P)-doped silicon nanocrystallites (nc-Si) buried in SiO2 layer were fabricated by laser ablation and the subsequent thermal annealing; i.e. solid-phase growth. The doping effects have been studied by measurements of temperature-dependent photoluminescence (PL) of Er from 6 K to 300 K and PL measurements of nc-Si at room temperature, as well as electron-spin-resonance (ESR) measurements of P donors in nc-Si. The results demonstrates that the solid-phase growth method can realize an intense 1.5micrometers Er PL without thermal quenching and P-donor doping can be attained in nc-Si. These results suggest that impurity doping is useful for modifying furthermore quantized properties of Si nanostructures and making them more functionally active.
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Kouichi Murakami, Changquing Li, Keiichi Kondo, Yoshiaki Yamamoto, Sinjo Mitani, and Tetsuya Makimura "Erbium and phosphorus impurity doping in Si nanostructures fabricated by laser ablation", Proc. SPIE 4636, Nanoscience Using Laser-Solid Interactions, (18 March 2002);

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