18 March 2002 Erbium and phosphorus impurity doping in Si nanostructures fabricated by laser ablation
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Proceedings Volume 4636, Nanoscience Using Laser-Solid Interactions; (2002) https://doi.org/10.1117/12.459726
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
Erbium (Er)- or phosphorus (P)-doped silicon nanocrystallites (nc-Si) buried in SiO2 layer were fabricated by laser ablation and the subsequent thermal annealing; i.e. solid-phase growth. The doping effects have been studied by measurements of temperature-dependent photoluminescence (PL) of Er from 6 K to 300 K and PL measurements of nc-Si at room temperature, as well as electron-spin-resonance (ESR) measurements of P donors in nc-Si. The results demonstrates that the solid-phase growth method can realize an intense 1.5micrometers Er PL without thermal quenching and P-donor doping can be attained in nc-Si. These results suggest that impurity doping is useful for modifying furthermore quantized properties of Si nanostructures and making them more functionally active.
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Kouichi Murakami, Kouichi Murakami, Changquing Li, Changquing Li, Keiichi Kondo, Keiichi Kondo, Yoshiaki Yamamoto, Yoshiaki Yamamoto, Sinjo Mitani, Sinjo Mitani, Tetsuya Makimura, Tetsuya Makimura, } "Erbium and phosphorus impurity doping in Si nanostructures fabricated by laser ablation", Proc. SPIE 4636, Nanoscience Using Laser-Solid Interactions, (18 March 2002); doi: 10.1117/12.459726; https://doi.org/10.1117/12.459726
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