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18 March 2002 Laser-induced electronic desorption and structural changes on Si(001)-(2x1)
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Proceedings Volume 4636, Nanoscience Using Laser-Solid Interactions; (2002)
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
We review desorption and structural changes on Si(001)-(2x1) surfaces induced by nanosecond laser irradiation with fluences well below thresholds of melting and ablation. Atomic imaging of the irradiated surface by scanning tunneling microscopy (STM) has shown that bond breaking takes place at intrinsic lattice sites and at atomic sites neighboring vacancies, leading to newly generation of vacancies and sequential growth of vacancy clusters. The bond breaking selectively removes outermost Si-dimers, exposing 1x1 like new phase. Repeated irradiations with a fixed fluence enlarge the new phase region up to 80% of the total surface area with a constant. The major products by the bond breaking are Si atoms emitting with a fluence-independent translational energy distribution, indicating strongly that the bond breaking is a purely electronic. Both efficiencies of Si-desorption and vacancy formation follow a common superlinear function of excitation intensity and show strong photon energy dependence with a prominent peak at 2.7 eV. The electronic bond breaking is shown to originate from nonlinear localization of excited species in surface electronic states.
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Jun'ichi Kanasaki and Katsumi Tanimura "Laser-induced electronic desorption and structural changes on Si(001)-(2x1)", Proc. SPIE 4636, Nanoscience Using Laser-Solid Interactions, (18 March 2002);


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