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18 June 2002 Direct-write of sensor devices by a laser forward transfer technique
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Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470642
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
The use of direct-write techniques in the design and manufacture of sensor devices provides a flexible approach for next generation commercial and defense sensor applications. Using a laser forward transfer technique, we have demonstrated the ability to rapidly prototype temperature, biological and chemical sensor devices. This process, known as matrix assissted pulsed laser evaporation direct-write or MAPLE-DW is compatible with a broad class of materials ranging form metals and electronic ceramics to chemoselective polymers and biomaterials. Various types of miniature sensor designs have been fabricated incorporating different materials such as metals, polymers, biomaterials or composites as multilayers or discrete structures on a single substrate. The MAPLE-DW process is computer controlled which allows the sensor design to be easily modified and adapted to any specific application. To illustrate the potential of this technique, a functional chemical sensor system is demonstrated by fabricating all the passive and sensor components by MAPLE-DW on a polyimide substrate. Additional devices fabricated by MAPLE DW including biosensors and temperature sensors and their performance are shown to illustrate the breadth of MAPLE DW and how this technique may influence current and future sensor applications.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alberto Pique, David W. Weir, Peter K. Wu, Bhanu Pratap, Craig B. Arnold, Bradley R. Ringeisen, Robert Andrew McGill, Raymond C. Y. Auyeung, Richard A. Kant, and Douglas B. Chrisey "Direct-write of sensor devices by a laser forward transfer technique", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); https://doi.org/10.1117/12.470642
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