High-efficiency refractive index modification of fused silica by F2 and KrF excimer laser multiwavelength excitation process

Kotaro Obata; Koji Sugioka; Toshimitsu Akane; Koichi Toyoda; Katsumi Midorikawa

doi:10.1117/12.491056

18 June 2002 High-efficiency refractive index modification of fused silica by F₂ and KrF excimer laser multiwavelength excitation process

Kotaro Obata, Koji Sugioka, Toshimitsu Akane, Koichi Toyoda, Katsumi Midorikawa

Author Affiliations +

Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.491056
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

Novel materials processing by a multiwavelength excitation process using F2 and KrF excimer lasers for highefficiency and high-speed refractive index modification of fused silica is demonstrated. We find that this process is essentially superior to single-wavelength F2 laser processing. The multiwavelength excitation process achieves twice of diffraction efficiency compared with that of single F2 laser irradiation sample at the same number oftotal photons supplied to the sample. This high-efficiency and high-speed modification is realized within ns ofthe delay time ofeach laser beam irradiation. In addition, the refractive index change of the multiwavelength sample was increased by 8.2x 1 Ø3, which is 1 .78 times larger than that of single wavelength F2 laser irradiation sample at same irradiation time. This superiority of the multiwavelength excitation process is attributed to resonance photoionization-like process based on excited state absorption in fused silica.

Citation Download Citation

Kotaro Obata, Koji Sugioka, Toshimitsu Akane, Koichi Toyoda, and Katsumi Midorikawa "High-efficiency refractive index modification of fused silica by F₂ and KrF excimer laser multiwavelength excitation process", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); https://doi.org/10.1117/12.491056

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