18 June 2002 Laser induced diffusible resistance: device characterization and process modeling
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Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470672
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
Highly accurate resistances can be made by iteratively laser inducing diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. We show that the current-voltage characteristics of these new microdevices are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model is proposed involving the calculation of the laser melted region in which the dopant diffusion occurs. Experimental results are well described by the proposed model.
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Michel Meunier, Michel Meunier, Maxime Cadotte, Maxime Cadotte, Mathieu Ducharme, Mathieu Ducharme, Yves Gagnon, Yves Gagnon, Alain Lacourse, Alain Lacourse, } "Laser induced diffusible resistance: device characterization and process modeling", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); doi: 10.1117/12.470672; https://doi.org/10.1117/12.470672
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