18 June 2002 The potential of ultrashort laser pulses (<10ps) in future material processing: mode-locked Ti:sapphire vs. q-switch Nd:YAG applications
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Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470671
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
This paper discusses possible potentials of ultra short laser pules in the pulse width range < 10 picosecond from the perspective of laser micro processing. With the problems involved generating ultra short laser pluses at high average power it will be shown, that the most successful applications performed with ultra short pulse technology is associated with problems, where the precise energy localization plays a crucial role. The discussion is based on laser processing examples from the application laboratory at the LMTB GmbH comparing applications using q-switch Nd:YAG lasers with nanosecond pulse widths and mode-locked, amplified Ti:sapphire lasers.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Ashkenasi, "The potential of ultrashort laser pulses (<10ps) in future material processing: mode-locked Ti:sapphire vs. q-switch Nd:YAG applications", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); doi: 10.1117/12.470671; https://doi.org/10.1117/12.470671
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