14 May 2002 Large intersubband nonlinearity for all-optical switching at 1.72 micron in Sb-based quantum wells
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Proceedings Volume 4638, Optical Devices for Fiber Communication III; (2002) https://doi.org/10.1117/12.467468
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
Based on our line shape analysis of temperature dependent absorption spectra on InGaAs/AlAsSb single quantum wells, we expect a fast carrier redistribution with in the broad inhomogeneous intersubband absorption spectrum from a wavelength as short as 1.72 micrometers . In addition, due to large resonant 3rd order susceptibility but weak absorption, we expect small saturation intensity (Is) at this short wavelength. We present wavelength dependent saturation measurements to show that the Is is, indeed, lower by more than an order of magnitude compared to that at the main peak (1.88 micrometers ). We also show from the figure of merit estimates that the carrier relaxation time at 1.72 micrometers is expected to be faster at 1.72 micron, consistent with the line shape analysis predictions.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Gopal, A. V. Gopal, Haruhiko Yoshida, Haruhiko Yoshida, Arup Neogi, Arup Neogi, Teruo Mozume, Teruo Mozume, Nikolai Georgiev, Nikolai Georgiev, Takasi Simoyama, Takasi Simoyama, Osamu Wada, Osamu Wada, Hiroshi Ishikawa, Hiroshi Ishikawa, } "Large intersubband nonlinearity for all-optical switching at 1.72 micron in Sb-based quantum wells", Proc. SPIE 4638, Optical Devices for Fiber Communication III, (14 May 2002); doi: 10.1117/12.467468; https://doi.org/10.1117/12.467468
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