18 June 2002 Integrated InGaAs-InP quantum wire lasers and Stark effect modulators for 1.55-micro applications
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Proceedings Volume 4640, Integrated Optics: Devices, Materials, and Technologies VI; (2002) https://doi.org/10.1117/12.433295
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Quantum wire lasers and modulators offer superior performance over their quantum well counterparts. This paper presents simulation of an integrated InGaAs-InP quantum wire laser-modulator structure operating at 1.55 μm. In the case of quantum wire lasers, we have computed the optical gain as a function of current density for wires having widths ranging between 60-100 Å. For example, the threshold current density of as low as 61 A/cm2 is computed for a wire with a width of 80 Å. In case of quantum wire modulators, we compute the changes in the absorption coefficient and index of refraction due to an external electric field ranging between 0-120kV/cm. For example, the percentage of absorption changes (Δα/α) between 30kV/cm and 60kV/cm applied electric field is about 450% for a 80 Å quantum wire. The changes in electro-absorption or electro-refraction can be maximized by choosing optimum combination of wire dimensions, operating wavelength and electric field to obtain lasing and modulation.
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Wenli Huang, Wenli Huang, Faquir C. Jain, Faquir C. Jain, } "Integrated InGaAs-InP quantum wire lasers and Stark effect modulators for 1.55-micro applications", Proc. SPIE 4640, Integrated Optics: Devices, Materials, and Technologies VI, (18 June 2002); doi: 10.1117/12.433295; https://doi.org/10.1117/12.433295
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