6 June 2002 (AlGaIn)N ultraviolet LED chips and their use in triphosphor luminescence conversion white LEDs
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Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002) https://doi.org/10.1117/12.469203
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We report on the development of (AlGaIn)N quantum well LEDs covering the 380 to 430 nm wavelength range, which serve as the primary light source for tri-phosphor luminescence conversion white LEDs. Epitaxial layer growth was performed by low-pressure metal-organic chemical vapor deposition on sapphire substrates. Mesa LEDs were fabricated and either mounted in standard epoxy-based 5 mm radial LED packages or flip-chip bonded on ceramic submounts. Then, LED-chips with peak wavelengths matching the absorption spectrum of an appropriately chosen inorganic tri-phosphor blend, were used for the fabrication of single-chip tri-color luminescence conversion white LEDs. These de-vices allowed us to demonstrate the feasibility of the above concept for improved color rendering and tunability.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Wagner, Joachim Wagner, Ulrich Kaufmann, Ulrich Kaufmann, Klaus Koehler, Klaus Koehler, Michael Kunzer, Michael Kunzer, Wilfried Pletschen, Wilfried Pletschen, Harald Obloh, Harald Obloh, Peter Schlotter, Peter Schlotter, Thilo Stephan, Thilo Stephan, Herbert Walcher, Herbert Walcher, Ard Ellens, Ard Ellens, Wolfgang Rossner, Wolfgang Rossner, Manfred Kobusch, Manfred Kobusch, "(AlGaIn)N ultraviolet LED chips and their use in triphosphor luminescence conversion white LEDs", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); doi: 10.1117/12.469203; https://doi.org/10.1117/12.469203
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