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6 June 2002 CdS nanoparticle light-emitting diode on Si
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Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
The fabrication of CdS-nanoparticle light emitting diodes (LEDs) on Si and their properties at room temperature and variant temperatures are reported. Due to passivation of p- hydroxyl thiophenol group around nanoparticles, 86-meV spectral shift of free exciton transition at room temperature is observed. Controlled conditions for the preparation of CdS-nanoparticle LED such as heat treatment and/or with oxygen-rich environment are found to have significant influences on emission spectra. Radiative recombination of carriers trapped in oxygen-impurity level of 273 meV presents in samples prepared in oxygen-rich environment. Coalescence of nanoparticles into bulk form also occurs to contribute to increased magnitude of luminescence. Spectral behaviors of electroluminescence with varied temperature are studied.
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Ching-Fuh Lin, Eih-Zhe Liang, Sheng-Ming Shih, and Wei-Fang Su "CdS nanoparticle light-emitting diode on Si", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002);

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