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6 June 2002 Highly efficient AlGaN-based UV-LEDs and their application as visible light sources
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Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002) https://doi.org/10.1117/12.469204
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
AlGaN-based highly efficient ultraviolet light emitting diodes (UV-LEDs) are reported. To enhance radiative recombination by suppressing the effect of the internal polarization field, we introduced an AlGaN quantum well as thin as 8 molecular layers, at which the optical transition is kept spatially direct. To improve the transparency and conductivity of p-type cladding layers, we introduced a short-period alloy superlattice. For stronger carrier confinement, high-Al-content carrier blocking layers are introduced. Further, to reduce nonradiative centers, we used high-quality bulk GaN substrate obtained by hydride vapor phase epitaxy (HVPE). The resultant UV-LED performance is intrinsically ideal. The maximum output power is 10mW at the injection current of 400 mA in spite of the optically absorptive GaN substrate, and the estimated internal quantum efficiency is over 80% at the wavelength of 352 nm. This wavelength has affords efficient excitation of fluorescent materials. We also demonstrate simultaneous and equivalent excitation of fluorescence material of three basal colors by this UV-LED.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Nishida and Naoki Kobayashi "Highly efficient AlGaN-based UV-LEDs and their application as visible light sources", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); https://doi.org/10.1117/12.469204
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