6 June 2002 Integrated polynomic growth parameter model for GaN/GaInN MQW structures for 6x2" and 11x2" mass production MOCVD reactors
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Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002) https://doi.org/10.1117/12.469205
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
The growth conditions for GaN/GaInN MQW structures have been studied in detail on AIX 2000 HT G3 Planetary Reactors. Major process variables, such as precursor supply, growth time and growth temperature have been varied. To describe the dependencies of MQW growth a second order polynomic model has been developed. The average prediction error within the model limits is 2.8 nm emission wavelength, in the range of 400 to 490 nm. The linear effects of the major growth parameters have been quantified. Additionally, statistically significant curvature factors have been identified as the product of growth time and temperature, the square of the TMIn molar supply rate and the square of the growth time. To increase the system throughput for mass production applications the reactor geometry has been scaled up to 11x2" in the AIX 2400 HT G3 configuration recently. Numerical simulation of thermal field and decomposition chemistry has been performed for the new reactor set up. From the simulation results initial values for the respective process parameters have been chosen. The numerical growth parameter model has been transferred to the larger configuration and is verified with experimental results. Employing the 11x2' Planetary Reactor configuration an excellent on wafer uniformity of better than 0.2% (1 nm) standard deviation at 487 nm average peak wavelength has been shown. Wafer-to-wafer reproducibility has been demonstrated with a variation of 1.4 nm standard deviation and run-to-run with a variation of 0.25 nm standard deviation at an average wavelength of 470 nm for a full load of 11 wafers. The uniformities obtained are compared with results from the 6x2" configuration.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oliver Schoen, Oliver Schoen, Harry Protzmann, Harry Protzmann, Markus Luenenbuerger, Markus Luenenbuerger, Bernd Wachtendorf, Bernd Wachtendorf, Bernd Schoettker, Bernd Schoettker, Michael Heuken, Michael Heuken, } "Integrated polynomic growth parameter model for GaN/GaInN MQW structures for 6x2" and 11x2" mass production MOCVD reactors", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); doi: 10.1117/12.469205; https://doi.org/10.1117/12.469205

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