13 June 2002 Ultra-low voltage organic light-emitting diodes based on PiN structures
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Proceedings Volume 4642, Organic Photonic Materials and Devices IV; (2002) https://doi.org/10.1117/12.470443
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We demonstrate an efficient organic electroluminescent devices with p-i-n structure. Anamorphous starburst, 4,4',4'-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyano- quinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achieved in the performances of device based on pure 8-tris- hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reach 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.
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Jingsong Huang, Jingsong Huang, Martin Pfeiffer, Martin Pfeiffer, Ansgar Werner, Ansgar Werner, Jan Blochwitz, Jan Blochwitz, Karl Leo, Karl Leo, Shiyong Liu, Shiyong Liu, } "Ultra-low voltage organic light-emitting diodes based on PiN structures", Proc. SPIE 4642, Organic Photonic Materials and Devices IV, (13 June 2002); doi: 10.1117/12.470443; https://doi.org/10.1117/12.470443
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