11 June 2002 Carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy
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Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470427
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy(x=0.03 and y=0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density napproximately equals 1018cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.
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Y. Chen, Y. Chen, Kong-Thon F. Tsen, Kong-Thon F. Tsen, David K. Ferry, David K. Ferry, } "Carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470427; https://doi.org/10.1117/12.470427
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