11 June 2002 Diffusion-controlled picosecond carrier dynamics in ErAS:GaAs superlattice
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Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470436
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Equidistant layers of self-assembled ErAs islands embedded in a GaAs matrix are a promising alternative to low-temperature-grown (LTG) GaAs for the fabrication of ultrafast photoconductive switches. Unlike in LTG-GaAs, the electronic properties of this new material can be engineered straightforwardly by varying the period of the ErAs island superlattice. The carrier dynamics in MBE grown ErAs:GaAs has been investigated using photo-current autocorrelation measurements on a single photoconductive switch as a function of the superlattice period L. The electron lifetime can be tuned from 10.6 ps down to 2.3 ps by varying L between 300 and 100 nm. The dependence of the electron lifetime on L is understood in terms of a diffusion model. Two such switches were incorporated in a coplanar waveguide and illuminated by short laser pulses transferred to the switches via single-mode fibers. This setup enables pulse generation, propagation and detection under cryogenic conditions and high magnetic fields. By compensating fiber dispersion, a time resolution of less than 3 ps was achieved, limited only by the waveguide dispersion. This setup is ideally suited for time domain characterization with ultrahigh resolution of mesoscopic devices integrated on the same wafer.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Griebel, Martin Griebel, Jurgen H. Smet, Jurgen H. Smet, Juergen Kuhl, Juergen Kuhl, Dan Driscoll, Dan Driscoll, Christoph Kadow, Christoph Kadow, Klaus von Klitzing, Klaus von Klitzing, Arthur C. Gossard, Arthur C. Gossard, "Diffusion-controlled picosecond carrier dynamics in ErAS:GaAs superlattice", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470436; https://doi.org/10.1117/12.470436
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