Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures

Shih-Wei Feng; Yung-Chen Cheng; Yi-Yin Chung; Chih-Wen Liu; Ming-Hua Mao; Chih Chung Yang; Yen-Sheng Lin; Kung-Jeng Ma; Jen-Inn Chyi

doi:10.1117/12.470417

11 June 2002 Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures

Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Ming-Hua Mao, Chih Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, Jen-Inn Chyi

Author Affiliations +

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470417
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

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Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Ming-Hua Mao, Chih Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi "Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470417

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