11 June 2002 Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures
Author Affiliations +
Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470417
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shih-Wei Feng, Shih-Wei Feng, Yung-Chen Cheng, Yung-Chen Cheng, Yi-Yin Chung, Yi-Yin Chung, Chih-Wen Liu, Chih-Wen Liu, Ming-Hua Mao, Ming-Hua Mao, Chih Chung Yang, Chih Chung Yang, Yen-Sheng Lin, Yen-Sheng Lin, Kung-Jeng Ma, Kung-Jeng Ma, Jen-Inn Chyi, Jen-Inn Chyi, } "Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470417; https://doi.org/10.1117/12.470417
PROCEEDINGS
4 PAGES


SHARE
Back to Top