11 June 2002 Excitonic optical Stark effect in GaN
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Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470414
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We report experimental and theoretical studies of the excitonic optical Stark effect in GaN photoexcited below the excitonic resonances with various polarization configurations and pump detunings, using nondegenerate pump-probe spectroscopy at 10 K. We observed that the Stark effect in GaN is strongly dependent on pump and probe relative linear polarizations. We found that this dependence results from the small spin-orbit splitting in GaN and a mixing of A and B valence bands induced by a linearly polarized pump. Using two different circular polarization configurations, we also observed splitting of degenerate excitons because of different optical Stark shifts. Our experimental results are explained by a simple theoretical model.
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Chan-Kyung Choi, Yia-Chung Chang, Jack Biu Lam, Sang-Kee Shee, Jerzy S. Krasinski, Jin-Joo Song, "Excitonic optical Stark effect in GaN", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470414; https://doi.org/10.1117/12.470414
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