11 June 2002 Excitonic optical Stark effect in GaN
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Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470414
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We report experimental and theoretical studies of the excitonic optical Stark effect in GaN photoexcited below the excitonic resonances with various polarization configurations and pump detunings, using nondegenerate pump-probe spectroscopy at 10 K. We observed that the Stark effect in GaN is strongly dependent on pump and probe relative linear polarizations. We found that this dependence results from the small spin-orbit splitting in GaN and a mixing of A and B valence bands induced by a linearly polarized pump. Using two different circular polarization configurations, we also observed splitting of degenerate excitons because of different optical Stark shifts. Our experimental results are explained by a simple theoretical model.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chan-Kyung Choi, Chan-Kyung Choi, Yia-Chung Chang, Yia-Chung Chang, Jack Biu Lam, Jack Biu Lam, Sang-Kee Shee, Sang-Kee Shee, Jerzy S. Krasinski, Jerzy S. Krasinski, Jin-Joo Song, Jin-Joo Song, } "Excitonic optical Stark effect in GaN", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470414; https://doi.org/10.1117/12.470414

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