11 June 2002 Time-resolved carrier and phonon dynamics in the near surface depletion region of GaAs (100)
Author Affiliations +
Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470438
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
The coupling between photoexcited plasma and coherent LO phonons in n-type GaAs (100) was investigated via time-resolved second harmonic generation. In addition to standard pump-probe setup, a time-delayed second pump was applied to inject excess plasma in the sample. The initial pump impulsively launched coherent LO phonons and the following second pump photoexcited excess plasma in the near surface depletion region, where the excess plasma could interact with the coherent LO phonons. It was found that the coherent LO phonon mode dephased rapidly as excess plasma was injected. Meanwhile, the coherent LO-electron and LO-hole coupling modes could be clearly observed in the Fourier spectra. These coupling modes showed plasma density dependent frequencies. Their coupling frequencies and dephasing process were studied in detail. The experimental results agree with the simulation of carrier and phonon dynamics in the near surface depletion region of GaAs on sub-picosecond time scale.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Ming Chang, Yu-Ming Chang, } "Time-resolved carrier and phonon dynamics in the near surface depletion region of GaAs (100)", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470438; https://doi.org/10.1117/12.470438
PROCEEDINGS
8 PAGES


SHARE
Back to Top