Ultrafast relaxation of highly photoexcited electrons in AlN

Mohamed A. Osman

doi:10.1117/12.470416

11 June 2002 Ultrafast relaxation of highly photoexcited electrons in AlN

Mohamed A. Osman

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470416
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with energies ranging from 800 mev to 1000 meV above the conduction band edge at different excitation levels. The energy relaxation, valley population, the build-up and decay of the hot phonon distributions are examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron-electron scattering leads to fast thermalization of the carrier distributions.

Citation Download Citation

Mohamed A. Osman "Ultrafast relaxation of highly photoexcited electrons in AlN", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470416

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