30 April 2002 Toward a new ultraviolet diode laser: luminescence and p-n junctions in ZnO films
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Proceedings Volume 4644, Seventh International Conference on Laser and Laser-Information Technologies; (2002) https://doi.org/10.1117/12.464143
Event: Seventh International Conference on Laser and Laser Information Technologies, 2001, Vladimir, Suzdal, Russian Federation
Abstract
In order to develop electroluminescent and laser devices based on the ultraviolet exciton emission of ZnO, it will be important to fabricate good p-n junctions. As-grown ZnO is normally of n-type because of oxygen vacancies and zinc interstitials acting as donors. Making p-type ZnO has been more difficult, believed due to self-compensation by intrinsic defects such as the donors Vo and Zni, or possibly by hydrogen as an unintentional extrinsic donor. In this work, we demonstrate that reactively sputtered, vacuum- annealed ZnO films can be changed from n-type to moderate p- type by adjusting the oxygen/argon ratio in the sputtering plasma. We report the properties of p-n homojunctions fabricated in this way and characterize transport in the films by Hall measurements. Ohmic contacts were formed by deposition of Au/Al. Our finding of p-type conductivity in apparently intrinsic ZnO formed by reactive sputtering is not inconsistent with calculated defect formation enthalpies if account is taken of the higher chemical potential of the atomic (ionic) oxygen reservoir represented by the sputter plasma, compared to the molecular oxygen reservoir assumed in the calculation of formation enthalpies. Photoluminescence of the sputtered and annealed films is characterized mainly by the 3.27 eV exciton peak at room temperature.
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Gang Xiong, Gang Xiong, John Wilkinson, John Wilkinson, S. Tuzemen, S. Tuzemen, K. B. Ucer, K. B. Ucer, Richard T. Williams, Richard T. Williams, } "Toward a new ultraviolet diode laser: luminescence and p-n junctions in ZnO films", Proc. SPIE 4644, Seventh International Conference on Laser and Laser-Information Technologies, (30 April 2002); doi: 10.1117/12.464143; https://doi.org/10.1117/12.464143
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