5 April 2002 1.54-μm spontaneous and stimulated emission of Er-2O centers in GaAs: experiments and modeling
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Proceedings Volume 4645, Rare-Earth-Doped Materials and Devices VI; (2002) https://doi.org/10.1117/12.461666
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples are prepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er-2O luminescent centers. The low-temperature spectral bandwidth of the predominant emission line at 1538.1 nm is measured to be approximately 0.04 nm. The decay time of approximately 1.1 ms is measured for the Er-related emission at 77 K. Stimulated emission is identified at 77 K from gain measurements by variable-stripe-length method. The measured gain up to 45 cm- at pumping power density of 0.1 kW/cm2. The model is presented that explains sublinear power dependence of the Er-related spontaneous luminescence.
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Petr Georgievich Eliseev, Petr Georgievich Eliseev, S. V. Gastev, S. V. Gastev, A. Koizumi, A. Koizumi, Y. Fujiwara, Y. Fujiwara, Y. Takeda, Y. Takeda, } "1.54-μm spontaneous and stimulated emission of Er-2O centers in GaAs: experiments and modeling", Proc. SPIE 4645, Rare-Earth-Doped Materials and Devices VI, (5 April 2002); doi: 10.1117/12.461666; https://doi.org/10.1117/12.461666
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