5 April 2002 Laser action in ion-exchanged waveguides fabricated on Er-Yb-doped phosphate glasses using planar technology
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Proceedings Volume 4645, Rare-Earth-Doped Materials and Devices VI; (2002) https://doi.org/10.1117/12.461652
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Waveguide laser arrays operating at 1.5 micrometers have been fabricated on Er:Yb-doped glass substrates by a two-step silver-sodium ion-exchange process based on thermal diffusion followed by a field-assisted burial step. The fabrication parameters have been optimized to achieve low propagation losses and good mode matching between waveguide channels and standard single-mode output fibers. Each laser cavity is formed by two Bragg gratings butt-coupled to the two ends of the channel waveguide. Fiber-coupled output power in excess of 10 mW is readily available from a single channel, when pumped from both sides by two 980-nm laser diodes providing a maximum power of ~300 mW. Single-longitudinal mode operation with output power of the order of 1 mW has been achieved using narrow reflectivity band (<30 GHz) Bragg gratings with different laser configurations. The laser operating wavelength can be selected across the whole C-band of optical communications (1530-1565 nm) by changing the Bragg grating peak reflectivity wavelength. A relative intensity noise lower than -150 dB/Hz has been measured for frequencies larger than 2 MHz. Stability of single-frequency operation, low intensity noise and flexibility in the choice of the operating wavelength make this laser array particularly attractive for wavelength division multiplexing optical transmissions.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gino Sorbello, Stefano Taccheo, Roberta Ramponi, Vittorio Foglietti, Shibin Jiang, Nasser Peyghambarian, Paolo Laporta, "Laser action in ion-exchanged waveguides fabricated on Er-Yb-doped phosphate glasses using planar technology", Proc. SPIE 4645, Rare-Earth-Doped Materials and Devices VI, (5 April 2002); doi: 10.1117/12.461652; https://doi.org/10.1117/12.461652
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