12 June 2002 Advances in 1300-nm InGaAsN quantum well VCSELs
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470509
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Improvements in the performance of InGaAsN quantum well VCSELs operating near 1300 nm are reported. The effects of alloy composition on the photoluminescence intensity, linewidth, and anneal-induced wavelength blueshift of molecular beam epitaxial InGaAsN quantum wells are detailed. VCSELs employing a conventional p-n diode structure are demonstrated and compared to devices using two n-type DBR mirrors and an internal tunnel diode. Room-temperature differential efficiencies as high as 0.24 W/A, output powers of 2.1 mW, and a maximum CW operating temperature as high as 105 degree(s)C have all been demonstrated in these devices.
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John F. Klem, John F. Klem, D. K. Serkland, D. K. Serkland, Kent M. Geib, Kent M. Geib, } "Advances in 1300-nm InGaAsN quantum well VCSELs", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470509; https://doi.org/10.1117/12.470509


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