12 June 2002 Carrier capture times in 1.3-μm materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470527
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wavelengths in the 1.3 micrometers regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structures.
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Joerg Hader, Joerg Hader, Jerome V. Moloney, Jerome V. Moloney, Stephan W. Koch, Stephan W. Koch, } "Carrier capture times in 1.3-μm materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470527; https://doi.org/10.1117/12.470527
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