12 June 2002 Current profiling in broad-area semiconductor lasers
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470533
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Voignier, Vincent Voignier, C. Sailliot, C. Sailliot, John A. Houlihan, John A. Houlihan, James R. O'Callaghan, James R. O'Callaghan, G. Wu, G. Wu, Guillaume Huyet, Guillaume Huyet, John Gerard McInerney, John Gerard McInerney, } "Current profiling in broad-area semiconductor lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470533; https://doi.org/10.1117/12.470533

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