12 June 2002 High-speed and high-efficiency AlInAs/GaInAs waveguide photodetectors for use in 40-Gbps applications
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470506
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
A separated-absorption-and-multiplication (SAM) AlInAs/GaInAs waveguide avalanche photodiode (APD) has been developed for 40-Gbps receivers. It has the widest bandwidth of 30-35 GHz and a gain-bandwidth product of 140-180 GHz, as a result of its small waveguide mesa structure and a thin 0.1micrometers thick avalanche layer. Preliminary results show the highest 10-Gbps sensitivity ever reported: -28.8 dBm at a bit-error-rate of 10-9. This waveguide APD is a candidate for 40-Gbps applications as a cost-effective super-efficient photodetector.
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Toshitaka Torikai, Toshitaka Torikai, Takeshi Nakata, Takeshi Nakata, Takeshi Takeuchi, Takeshi Takeuchi, Kikuo Makita, Kikuo Makita, } "High-speed and high-efficiency AlInAs/GaInAs waveguide photodetectors for use in 40-Gbps applications", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470506; https://doi.org/10.1117/12.470506
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