Modeling the optoelectronic mixing effect in metal-semiconductor-metal detectors

Keith Aliberti; Hongen Shen; Michael R. Stead; William C. Ruff; Barry L. Stann

doi:10.1117/12.470508

12 June 2002 Modeling the optoelectronic mixing effect in metal-semiconductor-metal detectors

Keith Aliberti, Hongen Shen, Michael R. Stead, William C. Ruff, Barry L. Stann

Author Affiliations +

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470508
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The optoelectronic mixing effect in metal-semiconductor-metal photodetectors (MSM-PDs) is studied. Numerical results, using the Scharfetter-Gummel scheme, are presented for gallium-arsenide (GaAs) MSM-PDs with different donor concentrations and analytical results are presented for devices with high background donor concentration operating below the flat-band condition and for low background donor concentration operating above the flat-band condition. MSM-PDs with unequal Schottky barrier heights at the electrodes (asymmetric MSM-PDs) are also studied. We find that asymmetric detectors exhibit asymmetric dc characteristics with the photocurrent asymmetry opposite to the dark-current asymmetry. We also find that the mixing efficiency of the MSM-PD increases with increase in applied ac voltage and decreases with increase in ac frequency. For asymmetric detectors, a rectification current exists even under zero mean ac bias that varies not only with ac voltage and optical power but also with ac-bias frequency. The theoretical results agree with observed experimental results.

Citation Download Citation

Keith Aliberti, Hongen Shen, Michael R. Stead, William C. Ruff, and Barry L. Stann "Modeling the optoelectronic mixing effect in metal-semiconductor-metal detectors", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470508

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