12 June 2002 Self-consistent electrical, thermal, and optical model of high-brightness tapered lasers
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470535
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
A quasi-3D model has been developed with the aim of studying the different factors limiting the performance of high-brightness high-power tapered lasers. The model solves the complete semiconductor and thermal equations, neglecting the flow of carriers and heat along the cavity ax is, together with a 2D Wide-Angle Beam Propagation method solving the optical propagation. The coupling between electrical, thermal and optical equations yields a stable solution which incorporates carrier and temperature induced perturbations of the refractive index. Although tapered lasers have already demonstrated superior beam quality performance in comparison with broad area devices, they still suffer of beam filamentation at high power levels. We analyze the influence of the different competing factors in the self-focusing process for 980 nm lasers with a gain guided taper section. The simulation results indicate that the lasers with the longest taper section provide the highest output power before the filamentation process is triggered, and that the backward propagating field plays a crucial role in the stability of the output beam.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luis Borruel, Luis Borruel, Slawomir Sujecki, Slawomir Sujecki, Ignacio Esquivias, Ignacio Esquivias, Jim Wykes, Jim Wykes, Phillip Sewell, Phillip Sewell, Trevor Mark Benson, Trevor Mark Benson, Eric C. Larkins, Eric C. Larkins, Julia Arias, Julia Arias, Beatriz Romero Herrero, Beatriz Romero Herrero, } "Self-consistent electrical, thermal, and optical model of high-brightness tapered lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470535; https://doi.org/10.1117/12.470535

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