12 June 2002 Simulating the effect of spatial hole burning on the modulation responses of VCSELs
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470515
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
This work focuses on the effects of spatial hole-burning (SHB) on the modulation response of oxide-confined vertical-cavity surface-emitting lasers. The comprehensive laser diode simulator, Minilase, as well as a simple 1-D rate equation models are used as simulation tools in the studies. We demonstrate that, due to the non-uniform transverse optical intensity, carriers at different locations of the quantum well (QW) have different stimulated recombination rates, and therefore exhibit different dynamic responses under direct modulation. This non-uniformity is revealed to be responsible for an over-damping of the relaxation oscillation and the reduction of the modulation bandwidth. Due to the limit of this nonlinear effect, VCSELs with small oxide apertures show lower intrinsic maximum bandwidth compared with that of large aperture structures. Further simulations demonstrate that this damping effect can be greatly reduced by making the electrical aperture smaller than the optical aperture, thereby significantly improving the modulation response.
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Yang Liu, Yang Liu, Wei-Choon Ng, Wei-Choon Ng, Fabiano A. Oyafuso, Fabiano A. Oyafuso, Benjamin Daniel Klein, Benjamin Daniel Klein, Karl Hess, Karl Hess, } "Simulating the effect of spatial hole burning on the modulation responses of VCSELs", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470515; https://doi.org/10.1117/12.470515
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