Simulation of temperature-dependent modulation response in multi-quantum-well lasers

Bernd Witzigmann; Mark S. Hybertsen

doi:10.1117/12.470530

12 June 2002 Simulation of temperature-dependent modulation response in multi-quantum-well lasers

Bernd Witzigmann, Mark S. Hybertsen

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470530
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The modulation response of a diode laser for telecommunications applications is a critical performance metric for high speed operation. In particular, for uncooled laser applications, the temperature sensitivity can by quite important. We have done microscopic calculations for 1.3 micrometers InGaAsP and InGaAlAs based quantum well laser designs using an integrated laser simulator. The simulator includes the normal carrier transport, the bound carrier populations in each well, the gain from the quantum wells, the optical fields and the stimulated emission self consistently for each bias condition of the device. In particular, the quantum wells are explicitly treated, including the quantum mechanical calculation of the bound levels, the density of states and the gain. With the inclusion of temperature dependent Auger recombination the details of the temperature sensitivity of the laser characteristics is well modeled. The final modulation response of the laser diodes depends both on the intrinsic quantum well gain characteristics and on the transport of carriers through the multi-quantum well active region of the diode. A compact model of the dynamic laser response must account for the impact of the transport.

Citation Download Citation

Bernd Witzigmann and Mark S. Hybertsen "Simulation of temperature-dependent modulation response in multi-quantum-well lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470530

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