12 June 2002 Spatially resolved polarization and temperature dynamics in quantum-well vertical-cavity surface emitters: a mesoscopic approach
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002); doi: 10.1117/12.470514
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
As quality and power of light emitted by GaAs-based vertical cavity surface emitting laser (VCSEL) devices are rather sensitive concerning temperature a dynamic description of the multi-mode field dynamics require the incorporation of temperature effects in the Maxwell-Bloch laser equations. In our approach we extend the equations of motion for the carrier density and the light field by dynamic equations for the spatially resolved lattice and plasma temperatures, which reflect the exchange of energy between the different subsystems in thermal quasi-equilibrium. The gain and refractive index spectra of the active quantum-well structure will be derived from temperature dependent microscopic scattering rates. Calculations are performed for both, carrier-carrier and carrier-phonon scattering processes, starting from Boltzmann's equation which then is approximated by a relaxation rate approach. The resulting scattering rates enter the band-resolved Semiconductor-Bloch equations which are directly coupled to the macroscopic field equations for the electric field and the carrier density. Based on that nonlinear system of equations, time resolved simulations are carried out and recorded over the transverse spatial coordinates for the vertically emitting laser structure. Numerical investigations of the dynamic behavior reveal the strong influence of temperature on the resulting near-field polarization mode patterns.
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Joachim Hamm, Klaus Boehringer, Ortwin G. Hess, "Spatially resolved polarization and temperature dynamics in quantum-well vertical-cavity surface emitters: a mesoscopic approach", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470514; https://doi.org/10.1117/12.470514
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KEYWORDS
Scattering

Polarization

Vertical cavity surface emitting lasers

Semiconductors

Laser scattering

Plasma

Near field optics

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