12 June 2002 Superlattice physics of digitally grown epitaxial InAlGaAs layers
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470525
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.
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J. Kenton White, Aniket Joshi, Marcus Extavour, Anthony J. SpringThorpe, Joerg Hader, Jerome V. Moloney, Stephan W. Koch, "Superlattice physics of digitally grown epitaxial InAlGaAs layers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470525; https://doi.org/10.1117/12.470525
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