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10 June 2002 Characterization of pulsed-laser deposited BaTiO3 thin films
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Proceedings Volume 4647, Functional Integration of Opto-Electro-Mechanical Devices and Systems II; (2002) https://doi.org/10.1117/12.469825
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
BaTiO3 thin films were grown on Si (100) and UV transparent fused silica substrates by KrF (248 nm) excimer laser deposition. The analysis of thin films was performed using XRD, AFM, UV/VIS/NIR spectrometer and Nano-indenter to study general features of BaTiO3 thin films and to optimize deposition parameters. The XRD spectra of BaTiO3 films at 600 degree(s)C on Si (100) show polycrystalline peaks with a strongly preferential orientation. The surface imaging was taken by AFM and shows obvious grain boundary structures. The transmittance spectra for BaTiO3 films on UV fused silica were measured. The absorption increases rapidly below 380 nm. The effects of changing background O2 gas pressure and substrate temperature were studied. Finally, the hardness and Young's reduced modulus and scratch test of BaTiO3 films were measured using Nano-indenter system.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Xu, Daniel P. Durisin, Qian Zhao, and Gregory W. Auner "Characterization of pulsed-laser deposited BaTiO3 thin films", Proc. SPIE 4647, Functional Integration of Opto-Electro-Mechanical Devices and Systems II, (10 June 2002); https://doi.org/10.1117/12.469825
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