16 April 2002 Crystallization process of Ag-Sb-Te alloy and films for phase-change optical data storage
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Proceedings Volume 4648, Test and Measurement Applications of Optoelectronic Devices; (2002) https://doi.org/10.1117/12.462660
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Ag-Sb-Te alloy and films are developed as Optical recording material based on amorphous-crystalline phase transformation. The crystallization process of Ag-Sb-Te films is systematically studied through measurement of recording characteristics to solve the trade off problem between data stability and erasing sensitivity. Phase change optical recording disks have been found to demonstrate long thermal stability of the amorphous recording marks. In the present work, preparation and characterization of the chalcogenide allow Agx - Sb2(1-x) - Te3(1-x) with different composition (xequals0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag-Sb-Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) have been obtained. It may also be concluded that Tg/Tm ratio is closer to required condition for the phase change optical data storage material. Thermal and optical analysis shows that the Ag-Sb-Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.
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Yagya Deva Sharma, Promod K. Bhatnagar, "Crystallization process of Ag-Sb-Te alloy and films for phase-change optical data storage", Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); doi: 10.1117/12.462660; https://doi.org/10.1117/12.462660
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