16 April 2002 High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm
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Proceedings Volume 4648, Test and Measurement Applications of Optoelectronic Devices; (2002); doi: 10.1117/12.462644
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low- cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. Low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 940 nm were grown by molecular beam epitaxy. The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length between 2 mm and 3 mm. Whereas the length of the tapered structure determines the high output power, the high brightness requires a ridge-waveguide structure with sufficient length. Here the length of the ridge section has been chosen to 500 micrometers . We achieved an optical output power of up to 5.3 W at room temperature in continuous wave mode. The threshold current density depends on the tapered length with values between 200 A/cm2 and 650 A/cm2. The slope efficiency is around 0.9 W/A for all devices. The wall plug efficiency reaches 44% at a current of 3 A. The beam quality factor remains nearly constant up to about 2.2 W having an M2-value of 1.3. At higher optical powers M2 increases fast. The lifetime of such devices has been extrapolated to more than 7500 h at room temperature.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marc T. Kelemen, Franz Rinner, Joseph Rogg, Nicolas Wiedmann, Rudolf Kiefer, Martin Walther, Michael Mikulla, Guenter Weimann, "High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm", Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); doi: 10.1117/12.462644; https://doi.org/10.1117/12.462644

Semiconductor lasers

High power lasers


Optical amplifiers

Continuous wave operation

Fiber amplifiers



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